WPM2006 power mosfet and schottky diode features z featuring a mosfet and schottky diode z independent pinout to each device to ease circuit design ultra low v f schottky applications z li--ion battery charging z high side dc-dc conversion circuits z high side drive for small brushless dc motors power management in portable, battery powered products mosfet maximum ratings (t j = 25 unless otherwise noted) schottky diode maximum ratings (t j = 25 unless otherwise noted) parameter symbol limits unit peak repetitive reverse voltage v rrm 20 v dc blocking voltage v r 20 v average rectified forward current i f 1 a dfn 2*2 - 6 l . marking: p in connections: j = specific device code yww = date code order information part number package shipping WPM2006 r 6/tr dfn 2*2- 6l 3000 tape & reel z z 1 1 2 3 6 5 4 a n/c d k g s k d jyww parameter symbol value unit d rain f to f s ource voltage v dss f 2 0 v g ate f to f s ource voltage v gs 8.0 v c ontinuous d rain c urrent ( n ote 1 ) s teady s tate t a = 25 c i d f 3 a t a = 8 5 c f 2 . 3 t 5 s t a = 25 c f 4 . 1 power d issipation ( n ote 1 ) s teady s tate t a = 25 c p d 1 . 45 w t 5 s 2 . 3 c ontinuous d rain c urrent ( n ote 2 ) s teady s tate t a = 25 c i d f 2 .0 a t a = 8 5 c f 1 . 5 power d issipation ( n ote 2 ) t a = 25 c p d 0.7 w pulsed d rain c urrent t p = 1 0 s i d m f 2 0 a operating junction and s torage temperature t j , t s t g f 55 to 15 0 c s ource c urrent (body d iode) ( n ote 2 ) i s f 2 a 1 . s urface mounted on fr 4 board using 1 in sq 2 . s urface pad size mounted on fr 4 board using minimum pad size, 2 oz c u. , 2 oz c u. 1 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
mosfet electrical characteristics unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain-source breakdown voltage bv dss v gs = 0v,i d = -250 a -20 v zero gate voltage drain current i dss v ds =-16v,v gs = 0v -1 a gate Csource leakage current i gss v gs = f ds = 0v f 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d =-250 a - 0.4 v v gs = -4.5v, i d = -2. 8 a 120 m
static drain-source on-resistance r ds(on) v gs = -2.5v,i d = - 2.0 a 150 m
forward transconductance g fs v ds = -10v, i d = - 2 .7a 7 .0 s dynamic characteristics input capacitance c iss pf output capacitance c oss pf reverse transfer capacitance c rss v ds = -15v, v gs = 0v, f = 1.0 mhz pf switching characteristics turn-on delay time t d(on) ns turn-on rise time t r ns turn-off delay time t d(off) ns turn-off fall time t f v gs = -4.5v, v ds = - 6 v, r l = 6 r g = 6
, ns total gate charge q g(tot) nc threshold gate charge q g(th) gate-source charge q gs 2.2 nc gate-drain charge q gd v ds = -6v,i d = - 2.8 a, v gs =-4.5v 1.2 nc drain-source diode characteristics and maximun ratings forward diode voltage v sd v gs = 0v,i s = - 1 schottky diode electrical characteristics (tj = 25 e c unless otherwise noted) parameter symbol min. typ. max. unit conditions v f1 0.425 i f =0.1a v f2 0.480 i f =0.5a forward voltage v f3 0.575 v i f =1a i r1 20 av r =10v reverse current i r2 100 av r =20v - 1 -0.6 90 110 480 46 10 38 25 43 5 7.2 a -1.5 -0.7 8v,v (t j =25 ,
thermal resistance ratings parameter symbol max unit junction f to f a mbient C s teady s tate ( n ote 3 ) r j a 86 c/ w junction f to f a mbient C t 5 s ( n ote 3 ) r j a 54 junction f to f a mbient C s teady s tate min pad ( n ote 4 ) r j a 1 7 5 3 . s urface mounted on fr 4 board using 1 in sq pad size, 2 oz c u. 4 . s urface mounted on fr 4 board using the minimum pad size, 2 oz c u. 1.0 nc v WPM2006 2 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (t j = 25 c unless otherwise noted) f 2 v 1 00 c 0 4 5 3 6 3 2 f v ds , d r a i n f to f s our c e volt ag e (volt s ) f i d , d r a i n c urre n t ( a mp s ) 2 1 0 1 figure 1. on f region characteristics 0. 5 4 2 1 . 52 . 5 3 2 1 1 0 3 figure 2. transfer characteristics f v gs , ga te f to f s our c e volt ag e (volt s ) 0. 1 35 0. 3 0. 2 0 figure 3. on f resistance vs. gate f to f source voltage f v gs , ga te f to f s our c e volt ag e (volt s ) r ds (on), d r a i n f to f s our c e re s i s t anc e ( ) f i d , d r a i n c urre n t ( a mp s ) figure 4. on f resistance vs. d rain current and gate voltage f i d , d r a i n c urre n t ( a mp s ) f 5 00 f 25 25 1 . 4 1 . 2 1 0.8 0. 6 5 0 125 1 00 figure 5. on f resistance variation with temperature f t j , ju nc tio n temper a ture ( c ) t j = 25 c 0. 5 24 t c = f 55 c i d = f 2 . 1 a t j = 25 c 7 515 0 i d = f 2 . 1 a v gs = f 4 . 5 v r ds (on), d r a i n f to f s our c e re s i s t anc e ( n orm a lize d ) 4 25 c r ds (on), d r a i n f to f s our c e re s i s t anc e ( ) 1 . 6 f 1 . 2 v 16 24 8 1 0 2 0 16 figure 6. d rain f to f source leakage current vs. voltage f v ds , d r a i n f to f s our c e volt ag e (volt s ) 12 v gs = 0 v f i dss , le akag e (n a ) t j = 15 0 c t j = 1 00 c f 1 . 4 v f 1 . 6 v f 1 .8 v 1 00 1 000 1 0000 78 f 2 . 2 v v ds f 1 0 v 0. 4 61 0 1 8 14 v gs = f 2 . 4 v v gs = f 6 v to f 3 v 0.08 0.09 0. 1 0 0. 11 0. 12 0. 13 0. 51 . 52 . 53 . 5 0. 14 t j = 25 c v gs = f 4 . 5 v v gs = f 2 . 5 v WPM2006 3 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0 1 2 3 4 5 3 6 9 12 15 0 v ds = 0 v v gs = 0 v 5 1 0 1 0 6 00 3 00 2 00 1 00 0 2 0 ga te f to f s our c e or d r a i n f to f s our c e volt ag e (v) figure 7. capacitance variation c , ca p ac it anc e (pf) figure 8. gate f to f source and d rain f to f source voltage vs. total charge t j = 25 c c o ss c i ss c r ss 5 00 r g , ga te re s i s t anc e ( ) figure 9. resistive switching time variation vs. gate resistance t, time (ns) 5 0 4 00 f v gs f v ds 15 0.9 0. 5 0 f v sd , s our c e f to f d r a i n volt ag e (v) figure 10. d iode forward voltage vs. current f i s , s our c e c urre n t ( a mp s ) v gs = 0 v t j = 25 c 2 . 5 0.7 0. 5 0. 3 1 1 . 5 2 0 1 2 3 4 5 f v gs q g , tot a l ga te c h a r g e (n c ) f v gs , ga te f to f s our c e volt ag e (v) i d = f 2 .8 a t j = 25 c f v ds , d r a i n f to f s our c e volt ag e (v) 1 1 0 1 00 1 000 11 0 1 00 t d(off) t d(o n ) t f t r v dd = f 16 v i d = f 2 . 1 a v gs = f 4 . 5 v t, time (s) figure 11. thermal response r(t), normalized effective transient thermal resistance 1.0 0.1 0.01 0.2 d = 0.5 0.05 0.01 single pulse 0.1 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 0.02 0.0175 0.0710 0.2706 0.5776 0.7086 107.55 f 1.7891 f 0.3074 f 0.0854 f 0.0154 f chip ambient normalized to ja at 10s. 0 246 8 WPM2006 4 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
10 -- 3 10 -- 2 110 10 -- 1 10 -- 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance -- junction capacitance (pf) 0.8 1.0 0.1 1 5 forward voltage drop v f -- forward voltage drop (v) -- forward current (a) i f 00.20.4 t j = 150 _ c capacitance 0 30 60 90 120 150 048121620 v ka -- reverse voltage (v 125 150 0.0001 1 20 reverse current vs. junction temperature t j -- junction temperature ( _ c) -- reverse current (ma) i r 0 255075100 c t 10 v 0.001 0.01 0.1 10 20 v 0.6 t j =25 _ c ) WPM2006 5 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
power dissipation characteristics 1. the package of WPM2006 is dfn2x2-6l, surface mounted on fr4 board using 1 in sq pad size 2ozcu r ja is 84 /w, surface mounted on fr4 board using minimum pad size 2ozcu r ja is 17 /w. 2. the power dissipation pd is based on tj(max)=150c, and the relation between tj and pd is tj = ta + r ja* pd , the maximum power dissipation is determined by r ja . 3. the r ja is the thermal impedance from junction to ambient, using larger pcb pad size can get smaller r ja and result in larger maximum power dissipation. 84 /w when mounted on a 1 in 2 pad of 2 oz copper 175 /w when mounted on a minimum pad of 2 oz copper WPM2006 6 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
min. max. min. max. a 0.700 0.800 0.028 0.031 a1 0.000 0.050 0.000 0.002 a3 d 1.924 2.076 0.076 0.082 e 1.924 2.076 0.076 0.082 d1 0.520 0.720 0.020 0.028 e1 0.900 1.100 0.035 0.043 k b 0.250 0.350 0.010 0.014 e l 0.174 0.326 0.007 0.013 symbol dimensions in millimeters dimensions in inches 0.650typ. 0.026typ. 0.200min. 0.008min. 0.203ref. 0.008ref. top view bottom view side view WPM2006 7 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
dfn 2*2- 6l pcb layout guide 2 . 3 0 pit c h 0. 25 0. 25 0.7 2 0. 35 0. 65 1 .0 5 0. 43 d ime ns io ns: millimeter s 1 WPM2006 8 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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